vishay tldr490. document number 83002 rev. 1.4, 30-aug-04 vishay semiconductors www.vishay.com 1 e3 pb pb-free 19220 high intensity led in ? 3 mm clear package description this led contains the double heterojunction (dh) gaalas on gaas technology. this deep red led can be utilized over a wide range of drive current. it can be dc or pulse driven to achieve desired light output. the device is available in a clear 3 mm package. features ? exceptional brightness very high intensity even at low drive currents small viewing angle low forward voltage 3 mm (t-1) untinted non-diffused package deep red color categorized for luminous intensity outstanding material efficiency lead-free device applications bright ambient lighting conditions battery powered equipment indoor and outdoor information displays portable equipment telecommunication indicators general use parts table absolute maximum ratings t amb = 25 c, unless otherwise specified tldr490. part color, luminous intensity angle of half intensity ( ? ) technology TLDR4900 red, i v > 63 mcd 16 gaaias on gaas tldr4901 red, i v = (63 to 200) mcd 16 gaaias on gaas parameter test condition symbol value unit reverse voltage v r 6v dc forward current i f 50 ma surge forward current t p 10 si fsm 1a power dissipation t amb 60 c p v 100 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 55 to + 100 c soldering temperature t 5 s, 2 mm from body t sd 260 c thermal resistance junction/ ambient r thja 400 k/w
www.vishay.com 2 document number 83002 rev. 1.4, 30-aug-04 vishay tldr490. vishay semiconductors optical and electrical characteristics t amb = 25 c, unless otherwise specified red tldr490. 1) in one packing unit i vmin /i vmax 0.5 typical characteristics (t amb = 25 c unless otherwise specified) parameter test condition part symbol min ty p. max unit luminous intensity 1) i f = 20 ma TLDR4900 i v 63 200 mcd tldr4901 i v 63 200 mcd luminous intensity i f = 1 ma i v 8mcd dominant wavelength i f = 20 ma d 648 nm peak wavelength i f = 20 ma p 650 nm spectral line half width i f = 20 ma ? 20 nm angle of half intensity i f = 20 ma ? 16 deg forward voltage i f = 20 ma v f 1.8 2.2 v reverse current v r = 6 v i r 10 a junction capacitance v r = 0, f = 1 mhz c j 30 pf figure 1. power dissipation vs. ambient temperature 100 80 60 40 0 25 50 75 100 125 p - power dissipation ( mw ) v t amb - ambient temperature ( c) 95 10904 20 0 figure 2. forward current vs. ambient temperature for ingan 0 10 20 30 40 60 i - forward current ( ma ) f t amb - ambient temperature ( c) 95 10095 50 020406080100
vishay tldr490. document number 83002 rev. 1.4, 30-aug-04 vishay semiconductors www.vishay.com 3 figure 3. forward current vs. pulse length figure 4. rel. luminous intensity vs. angular displacement figure 5. 0.02 0.05 0.1 0.2 1 0.5 t p /t= 0.01 t amb 65 c 0.01 0.1 1 10 1 10 100 1000 10000 t p - pulse length ( ms ) 100 95 10047 i - forward current ( ma ) f 0.4 0.2 0 0.2 0.4 0.6 95 10044 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 i - relative luminous intensity v rel 1 10 100 95 10014 1 1.5 2 2.5 3 i - forward current ( ma ) f v f - forward voltag e(v) red figure 6. rel. luminous intensity vs. ambient temperature figure 7. rel. lumin. intensity vs. forw. current/duty cycle figure 8. relative luminous intensity vs. forward current 0 95 10015 20 40 60 80 100 i - relative luminous intensity v rel t amb - ambient temperature ( c) 0 0.4 0.8 1.2 1.6 2.0 red 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 95 10262 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t i - relative luminous intensity v rel 2.0 red i fav = 10 ma, const. 10 0.1 1 0.01 0.1 1 10 100 95 10016 i - relative luminous intensity v rel i f - forward current ( ma ) red
www.vishay.com 4 document number 83002 rev. 1.4, 30-aug-04 vishay tldr490. vishay semiconductors package dimensions in mm figure 9. relative intensity vs. wavelength 600 620 640 660 680 0 0.2 0.4 0.6 0.8 1.2 700 95 10018 i - relative luminous intensity v rel - wavelength ( nm ) 1.0 red 95 10952
vishay tldr490. document number 83002 rev. 1.4, 30-aug-04 vishay semiconductors www.vishay.com 5 ozone depleting substa nces policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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